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- W2091828410 abstract "We report on the role of thallium as a surfactant in the growth of InAs on GaAs(001) by molecular beam epitaxy. Thallium suppresses the transition from two-dimensional to three-dimensional growth modes for temperatures below 440 °C without incorporating significantly into the bulk InAs lattice. It extends the range of temperatures at which InAs may be grown, and appears to improve the crystalline quality of growth at 520 °C. Preliminary results indicate that at low temperature (280 °C) thallium does not prolong pseudomorphic growth beyond the normal critical layer thickness, but rather may form interfacial InTlAs with a greater concentration of thallium than has been achieved to date." @default.
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- W2091828410 title "Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001)" @default.
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