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- W2091855382 abstract "We studied the interface roughnesses of SiO2/Si(001) for gate oxides of 8 and 15 nm thicknesses together with RCA-treated samples by using scanning tunneling microscopy (STM). By STM observation and scaling analysis we made clear that the interface roughnesses of thermal oxides/Si substrates were similar to each other and to that of the chemical oxide/Si substrate prior to thermal oxidation; the correlation length was 23–26 nm and the rms roughness at length scales larger than the correlation length was 0.28–0.29 nm. The results indicate that the interface roughnesses of the oxides are determined by the processes prior to the oxidations." @default.
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- W2091855382 date "2002-07-02" @default.
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- W2091855382 title "Analysis of SiO2/Si(001) interface roughness for thin gate oxides by scanning tunneling microscopy" @default.
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- W2091855382 doi "https://doi.org/10.1063/1.1494124" @default.
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