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• W2091855462 abstract "The UV-induced room-temperature interaction of Ga0.47In0.53As with NH3 and SiH4, the precursor gases used in chemical vapor deposition of Si3N4, has been studied by in situ surface-sensitive techniques. Growth of the Ga0.47In0.53As substrates by molecular-beam epitaxy, gas exposures under UV irradiation (185 and 254 nm of a Hg lamp), and analysis were performed in connected ultra-high-vacuum chambers. All reactions observed need UV illumination and correspond to sticking coefficients of ~ 10−8 with a 0.1 mW/cm2 UV fluence. The first SiH4 exposure deposits silicon with a near-covalent bonding, without modification of the bonds in the substrate. On the opposite, NH3 exposures deposit nitrogen which strongly bonds to substrate atoms and/or to Si atoms eventually present. The next SiH4 exposure deposits silicon which forms Si-N bonds and simultaneously desorbs the topmost As layer. The process goes on up to the build-up of a bulk-like S3N4 layer." @default.
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• W2091855462 date "1991-07-01" @default.
• W2091855462 modified "2023-09-25" @default.
• W2091855462 title "First steps of the build-up of the Si3N4/Ga0.47In0.53 As interface by UV-induced chemical vapor deposition" @default.
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• W2091855462 doi "https://doi.org/10.1016/0039-6028(91)90974-w" @default.
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