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• W2091861344 endingPage "2107" @default.
• W2091861344 startingPage "2099" @default.
• W2091861344 abstract "The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF3, C3F6, and C3F6/H2, indicate that the reactor wall temperature is an important parameter in the etch process. Adequate temperature control can increase oxide etch selectivity over nitride and silicon. The loss of fluorocarbon species from the plasma to the walls is reduced as the wall temperature increased. The fluorocarbon deposition on a cooled substrate surface increases concomitantly, resulting in a more efficient suppression of silicon and nitride etch rates, whereas oxide etch rates remain nearly constant." @default.
• W2091861344 created "2016-06-24" @default.
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• W2091861344 date "1998-07-01" @default.
• W2091861344 modified "2023-10-17" @default.
• W2091861344 title "Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas" @default.
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• W2091861344 doi "https://doi.org/10.1116/1.581316" @default.
• W2091861344 hasPublicationYear "1998" @default.
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