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- W2091864767 abstract "Abstract In this paper, Zirconium dioxide nanoparticle has been synthesized using wet chemical methods at room temperature. The structural characterization (SEM / X-ray Diffraction) of the nanoscaled Zirconium Dioxide is discussed in this paper. The particle size of the ZrO2 is observed in the range of 50–100 nm. It is expected that both the nanoscaling and the high dielectric constant of ZrO2 would be an advantage while fabricating a FET. The conventional dielectric SiO2 used for gate, with a dielectric constant of >3.9, obviously cannot survive the challenge of an End of Oxide Thickness (EOT ≤ 1 nm). The synthesized ZrO2 in the nanoscale is subjected for impedance analysis (results are presented here) and is found to have a dielectric constant of 23. Due to the high–κ value, it is expected to be superior than SiO2 as a gate material. Keywords: High-κFinFETCMOS scalingNanoparticleITRS" @default.
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- W2091864767 date "2010-11-12" @default.
- W2091864767 modified "2023-09-24" @default.
- W2091864767 title "Nanosized High κ Dielectric Material for FINFET" @default.
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- W2091864767 doi "https://doi.org/10.1080/10584587.2010.492014" @default.
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