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- W2091871641 abstract "Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO 2 and trichloroethylene (TCE)-grown SiO 2 as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO 2 than for dry-grown SiO 2 . The addition of TCE resulted also in significant increases of carrier lifetimes. The bonded SOI strength using TCE-grown SiO 2 is comparable to that using dry-grown SiO 2 ." @default.
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- W2091871641 date "1993-06-01" @default.
- W2091871641 modified "2023-09-23" @default.
- W2091871641 title "Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO<sub>2</sub>" @default.
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- W2091871641 doi "https://doi.org/10.1143/jjap.32.2854" @default.
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