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- W2092126056 abstract "With their excellent mechanical, thermal, and optical properties, silicon nitride (SiNx) films are widely used as bothsupporting and insulating materials for MEMS structures. Practical applications of SiNx films rely on their film quality,which will affect the performance and stability of the related devices. In general, SiNx films are deposited by lowpressure chemical vapor deposition (LPCVD) or high-frequency (13.56 MHz) plasma-enhanced chemical vapordeposition (HF-PECVD). However, up to now, less reports about the deposition of SiNx films by low-frequencyplasma-enhanced chemical vapor deposition (LF-PECVD) have been made. This paper reports the preparation of SiNxthin films by PECVD with a low frequency (380 kHz). The process parameters were carefully optimized for the growthof SiNx films. And the thicknesses and refractive indices of SiNx films were characterized by spectroscopicellipsometry with small mean square error (MSE<2.5) using Tauc-Lorentz fitting model. It was revealed that thethickness uniformity, deposition rate, and wet etching rate of the as-prepared SiNx films strongly depend on the keyprocess parameters, including RF frequency, power, gas flow ratio, deposition temperature and pressure. Our resultsalso indicated that the refractive index of SiNx film can be rationally tuned to be 1.874 ~ 2.145 by LF-PECVD.Moreover, the wet etching rate of SiNx film in a diluted HF solution can be controlled to be 7.4 to 65.9 nm/min, and thedeposition rate ranges from 23.5 to 260.8 nm/min. We also experimentally confirmed that the SiNx thin films depositedwith low frequency (380 kHz) exhibit better thickness uniformity, higher deposition rate and lower wet etching rate,compared with those deposited with high frequency (13.56 MHz). Particularly, 150-mm-diameter SiNx thin films withhigh thickness uniformity (thickness nonuniformity <1.0%) were successfully produced in this work. With theirtunable physical properties, the LF-PECVD SiNx thin films exhibit great potential in microelectronics andoptoelectronics applications. Moreover, the SiNx films prepared by LF-PECVD are compared with those produced byHF-PECVD and DF-PECVD." @default.
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- W2092126056 date "2009-05-11" @default.
- W2092126056 modified "2023-10-15" @default.
- W2092126056 title "High-quality silicon nitride films prepared by low-frequency plasma-enhanced chemical vapor deposition" @default.
- W2092126056 doi "https://doi.org/10.1117/12.831014" @default.
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