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• W2092134060 endingPage "L351" @default.
• W2092134060 startingPage "L351" @default.
• W2092134060 abstract "The electrical characteristics of Ag, Ti, Au, Pd and Ni Schottky contacts on GaN and Al 0.11 Ga 0.89 N grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrates have been investigated. Al 0.11 Ga 0.89 N Schottky barrier height values are bit higher than the values of GaN contacts except Ti Schottky contacts. Fermi-level pinning has been observed for both GaN and Al 0.11 Ga 0.89 N Schottky contacts. The pinning degree of GaN and Al 0.11 Ga 0.89 N are much less than GaAs, Si and GaP, but both of them may be similar to CdS." @default.
• W2092134060 created "2016-06-24" @default.
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• W2092134060 date "2000-04-01" @default.
• W2092134060 modified "2023-09-30" @default.
• W2092134060 title "Electrical Characteristics of Schottky Contacts on GaN and Al_0.11Ga_0.89N" @default.
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• W2092134060 doi "https://doi.org/10.1143/jjap.39.l351" @default.
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