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• W2092147957 abstract "Abstract SiH radicals in the gas phase have been studied by LIF following the 193 and 248 nm photolysis of phenylsilane. The rate constants of electronic quenching by NO and O 2 of SiH A 2 Δ with a zero-pressure lifetime of 490±40 ns are determined to be (4.6±0.3) × 10 −10 and (1.3±0.2) × 10 −10 cm 3 molecule −1 s −1 , respectively. The reactions of SiH X 2 Π with NO, O 2 , SiH 4 , and phenylsilane proceed at rates of (2.5±0.3) × 10 −10 , (1.7±0.2) × 10 −10 , (2.8±0.6) × 10 −10 , and ≈ 3 × 10 −10 cm 3 molecule −1 s −1 , respectively. The quenching and reaction mechanisms are discussed in comparison with those of the isovalent CH radical." @default.
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• W2092147957 date "1989-10-01" @default.
• W2092147957 modified "2023-09-24" @default.
• W2092147957 title "Electronic quenching and chemical reactions of SiH radicals in the gas phase" @default.
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• W2092147957 doi "https://doi.org/10.1016/0009-2614(89)87009-5" @default.
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