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- W2092172241 abstract "The parasitic resistance (Rpara) of Ge p-channel metal–oxide–semiconductor field-effect transistors (p-MOSFETs) fabricated by ion implantation after germanidation (IAG) has been investigated by varying the drive-in annealing temperature. The lowest Rpara of 835 Ω µm was achieved after 450 °C drive-in annealing for 1 min. Boron segregation between NiGe and Ge induced by drive-in annealing has advantages in forming an abrupt metallic source/drain (S/D) junction and contributes to the decrease in Rpara. The appropriate process window for fabricating Ge p-MOSFETs by IAG was also given. IAG, a pathway for introducing a Ge channel into CMOS technology beyond the 10 nm node, was proved to be effective for reducing Rpara." @default.
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- W2092172241 date "2015-04-22" @default.
- W2092172241 modified "2023-09-26" @default.
- W2092172241 title "Achieving low parasitic resistance in Ge p-channel metal–oxide–semiconductor field-effect transistors by ion implantation after germanidation" @default.
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