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• W2092177535 abstract "Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices." @default.
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• W2092177535 date "2004-03-10" @default.
• W2092177535 modified "2023-10-16" @default.
• W2092177535 title "Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)" @default.
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• W2092177535 doi "https://doi.org/10.1063/1.1669064" @default.
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