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- W2092196525 abstract "Silicon wires with nanometric dimensions have been fabricated on SIMOX wafers by means of e-beam lithography and wet chemical etchings, exploiting the underetching properties of the KOH etchant. The cross section of the resistors has a trapezoidal shape; a minimum top width of 40 nm has been obtained. The whole process required only two writing steps. I–V characteristics were measured at room temperature as a function of the backgate voltage." @default.
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- W2092196525 date "2005-03-01" @default.
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- W2092196525 title "Silicon nanowires fabricated by means of an underetching technique" @default.
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- W2092196525 doi "https://doi.org/10.1016/j.mee.2004.12.044" @default.
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