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• W2092243576 abstract "Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm." @default.
• W2092243576 created "2016-06-24" @default.
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• W2092243576 date "2015-03-02" @default.
• W2092243576 modified "2023-10-07" @default.
• W2092243576 title "Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits" @default.
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• W2092243576 doi "https://doi.org/10.1063/1.4914085" @default.
• W2092243576 hasPublicationYear "2015" @default.
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