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• W2092442020 abstract "The application of impedance spectroscopy (IS) analytical theory to the characterization of the pn-interface of Cu(In,Ga)Se2 (CIGS)-based solar cells was investigated with a focus on directly observing the sputtering damage during deposition of an n-layer. We develop an equivalent circuit of the CIGS solar cell involving series and parallel resistances and a “capacitance-like element,” called a constant phase element (CPE), around the n-layer/p-CIGS interface. The CPE index of the impedance is shown to reflect the quality of the n-layer/p-CIGS interface in terms of the sputtering damage and defects of the heterojunction. These results demonstrate the possibility of applying IS practically as a simple method for characterizing the sputtering damage around pn-interfaces in semiconductor devices." @default.
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• W2092442020 date "2014-06-01" @default.
• W2092442020 modified "2023-10-14" @default.
• W2092442020 title "Investigation of Sputtering Damage around pn Interfaces of Cu(In,Ga)Se2 Solar Cells by Impedance Spectroscopy" @default.
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• W2092442020 doi "https://doi.org/10.1016/j.electacta.2014.04.058" @default.
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