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- W2092503178 abstract "A schematic reaction mechanism is proposed to explain the Ti/TiN chemical vapor deposition (CVD) process using the TiCl 4 molecule as the source species. The scheme can be considered as two successive steps: (I) TiCl 4 molecules are adsorbed onto surface reactive sites through concerted electron delocalizations, (II) ambient reducing agents such as H 2 or NH 3 reactively eliminate Cl atoms from Ti atoms in the form of HCl. Preliminary molecular orbital (MO) calculations indicate that step (I) is an energetically easy process. Conversely, step (II) is expected to be the rate-determining process with a considerable activation energy. As a whole, the characteristics of resultant CVD films ( e.g. , the conformality) are probably controlled not by the TiCl 4 -adsorption step (I) but by the Cl elimination step (II)." @default.
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- W2092503178 date "1995-03-01" @default.
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- W2092503178 title "On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl<sub>4</sub>" @default.
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- W2092503178 doi "https://doi.org/10.1143/jjap.34.l326" @default.
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