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• W2092765199 abstract "The effects of postdeposition anneal of chemical vapor deposited silicon nitride are studied. The Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> films were in situ annealed in either H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (2%)/O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> at 950/spl deg/C or N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O at 950/spl deg/C in a rapid thermal oxidation system. It is found that an interfacial oxide was grown at the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> /Si interface by both postdeposition anneal conditions. This was confirmed by thickness measurement and X-ray photoelectronic spectroscopy (XPS) analysis. The devices with H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (2%)/O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> anneal exhibit a lower gate leakage current and improved reliability compared to that of N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O anneal. This improvement is attributed to a greater efficiency of generating atomic oxygen in the presence of a small amount of hydrogen, leading to the elimination of structural defects in the as-deposited Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> film by the atomic oxygen. Good drivability is also demonstrated on a 0.12 μm n-MOSFET device." @default.
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• W2092765199 date "2002-03-01" @default.
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• W2092765199 title "Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric" @default.
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• W2092765199 doi "https://doi.org/10.1109/55.988812" @default.
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