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- W2092886971 abstract "We investigated current density-voltage (J-V) characteristics of copper phthalocyanine (CuPc) thin films depending on active device areas. We prepared CuPc thin-film devices with active areas smaller than S=625μm2 using a photolithography technique. The maximum breakdown current density (JMAX) and voltage (VMAX) of the devices markedly increased as the active area was decreased from S=625 to 7.9μm2. In the smallest device, with S=7.9μm2, we obtained not only an extremely high current density of JMAX=128kA∕cm2 at VMAX=9.2V, but also unique J-V characteristics, indicating that the carrier conduction process shifted from the Fowler-Nordheim tunneling injection mechanism to shallow-trap and trap-free space-charge-limited current mechanisms." @default.
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- W2092886971 date "2006-01-16" @default.
- W2092886971 modified "2023-09-27" @default.
- W2092886971 title "Carrier injection and transport characteristics of copper phthalocyanine thin films under low to extremely high current densities" @default.
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- W2092886971 doi "https://doi.org/10.1063/1.2165197" @default.
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