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- W2092890036 abstract "We studied the vacancy formation energy in silicon crystals evaporated with various metals. Specimens were cut out from a high-purity FZ. Si crystal. They were evaporated with various metals and heated in hydrogen gas followed by quenching in water. Instead of vacancy (V) concentration, we measured the optical absorption coefficient due to VH 4 , which is a complex of one V and four H atoms. The vacancy formation energy in these specimens was found to be much smaller than that in high-purity specimens and that in specimens doped with metallic impurities in an isolated state (solid solution). Moreover, after heating for a short time, the vacancy concentration exhibited a spatial distribution decreasing with distance from the interface, which suggests that the vacancy source is the interface region." @default.
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- W2092890036 date "2005-04-01" @default.
- W2092890036 modified "2023-10-14" @default.
- W2092890036 title "Vacancy Formation Energy at Metal-Silicon Interface Region" @default.
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- W2092890036 doi "https://doi.org/10.1143/jjap.44.l593" @default.
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