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- W2093016502 abstract "A parameterization for band-to-band Auger recombination in silicon at 300 K is proposed. This general parameterization accurately fits the available experimental lifetime data for arbitrary injection level and arbitrary dopant density, for both n-type and p-type dopants. We confirm that Auger recombination is enhanced above the traditional free-particle rate at both low injection and high injection conditions. Further, the rate of enhancement is shown to be less for highly injected intrinsic silicon than for lowly injected doped silicon, consistent with the theory of Coulomb-enhanced Auger recombination. Variations on the parameterization are discussed." @default.
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- W2093016502 date "2002-02-15" @default.
- W2093016502 modified "2023-10-02" @default.
- W2093016502 title "General parameterization of Auger recombination in crystalline silicon" @default.
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- W2093016502 doi "https://doi.org/10.1063/1.1432476" @default.
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