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• W2093196631 abstract "A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region." @default.
• W2093196631 created "2016-06-24" @default.
• W2093196631 creator A5008319464 @default.
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• W2093196631 date "2013-11-11" @default.
• W2093196631 modified "2023-10-17" @default.
• W2093196631 title "GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection" @default.
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• W2093196631 doi "https://doi.org/10.1063/1.4829576" @default.
• W2093196631 hasPublicationYear "2013" @default.
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