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• W2093236876 abstract "Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 × 1020 atoms/cm3 at the fin sidewall." @default.
• W2093236876 created "2016-06-24" @default.
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• W2093236876 date "2012-02-27" @default.
• W2093236876 modified "2023-09-27" @default.
• W2093236876 title "Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography" @default.
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• W2093236876 doi "https://doi.org/10.1063/1.3690864" @default.
• W2093236876 hasPublicationYear "2012" @default.
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