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- W2093322369 abstract "In the growth of epitaxial silicon using SiCl4 as source material it is known, that the growth rate at first increases with increasing pSiCl4, but at higher pSiCl4 decreases and finally becomes negative. The exact shape of the growth curve and especi ally the point of zero growth, where the etch rate counterbalances the growth rate, differs considerably amongst various investigators. This phenomenon was subject to theoretical considerations. Three models were evaluated: (i) a simple equilibrium model in which gas transport limited kinetics are used with one single diffusion coefficient for all species; (ii) an extended model using individual diffusion coefficients; (iii) a model as in (ii) but including the effect of thermal diffusion. It is shown that models (i) and (ii) do not give a general solution of the problem. The best results are obtained with model (iii). The growth rate appears to be very sensitive to the temperature gradient ▽T. As ▽T depends on the kind of apparatus used in the deposition process, it provides a reasonable explanation for the observed differences." @default.
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- W2093322369 date "1975-12-01" @default.
- W2093322369 modified "2023-09-23" @default.
- W2093322369 title "Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradient" @default.
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- W2093322369 doi "https://doi.org/10.1016/0022-0248(75)90144-x" @default.
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