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- W2093365089 abstract "Measurements of x-ray photoemission from thin metal films on n-type and p-type Si/SiO x substrates were made in the presence of light bias. The effect of the illumination from a xenon source is the generation of an open-circuit photovoltage between the metal film and the Si base. This photovoltage produces an apparent shift in the binding energy of the photoelectron from the metal. For the n-type Si/SiO x /Pd structure , the measured binding energy of the Pd 3d 5 2 photoelectron is found to be larger by 0.15 ± 0.03 eV, whereas the corresponding energy for p-type Si/SiO x /Cr/Pd is smaller by 0.23 ± 0.03 eV. The direction of the energy shift is in agreement with the Schottky photovoltaic theory. The technique can be used to study the relation between the open-circuit photovoltage and the metal microislands deposited on the semiconductor surface." @default.
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- W2093365089 date "1990-01-01" @default.
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- W2093365089 title "XPS study of metal/SiOx/Si interfaces" @default.
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- W2093365089 doi "https://doi.org/10.1016/0368-2048(90)85010-7" @default.
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