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• W2093556935 abstract "Time-dependent dielectric breakdown (TDDB) measurement of MOS capacitors on an n-type 4 ° off-axis 4H-SiC(0001) wafer free from step-bunching showed specific breakdown in the Weibull distribution plots. By observing the as-grown SiC-epi wafer surface, two kinds of epitaxial surface defect, Trapezoid-shape and Bar-shape defects, were confirmed with confocal microscope. Charge to breakdown (Qbd) of MOS capacitors including an upstream line of these defects is almost the same value as that of a Wear-out breakdown region. On the other hand, the gate oxide breakdown of MOS capacitors occurred at a downstream line. It has revealed that specific part of these defects causes degradation of oxide reliability. Cross-sectional TEM images of MOS structure show that gate oxide thickness of MOS capacitor is non-uniform on the downstream line. Moreover, AFM observation of as-grown and oxidized SiC-epitaxial surfaces indicated that surface roughness of downstream line becomes 3-4 times larger than the as-grown one by oxidation process." @default.
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• W2093556935 date "2013-01-01" @default.
• W2093556935 modified "2023-09-23" @default.
• W2093556935 title "Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability" @default.
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• W2093556935 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.745" @default.
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