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- W2093611596 abstract "We have investigated the initial growth of GaAs films on Si(111) substrates by molecular beam epitaxy. GaAs grew while accomplishing high-quality grain-boundaries at a size of about 100 nm with no dislocations during the initial stage (t ≤ 200 nm). The high-quality was confirmed based on the sharpness (165 s at an as-grown thickness of 100–200 nm) of the full width at half maximum (FWHM) of the X-ray rocking curves of (111) GaAs diffraction, and on cross-sectional transmission electron microscope observations. Up to a thickness of 100 nm, the FWHM coincides well with the values of a perfect crystal, calculated based on dynamic diffraction theory. This is greatly related to bond matching near to the interface between GaAs and Si in the (111)-orientation. However, in addition to the growth of high-quality grain boundaries, the growth accompanying areas having bad-quality regions surrounding them was dominant as the growth proceeded to thicknesses greater than 300 nm." @default.
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- W2093611596 date "1995-09-01" @default.
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- W2093611596 title "Initial growth of GaAs on Si(111) substrates by molecular beam epitaxy" @default.
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- W2093611596 doi "https://doi.org/10.1016/0022-0248(95)00160-3" @default.
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