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- W2093622862 abstract "Implantation of n- and p-type GaN with Ti+, O+, Fe+, or Cr+ was found to produce defect levels which pinned the Fermi level in these materials at EC−(0.20–0.49) eV (n type) or EV+0.44 eV (p type). Maximum sheet resistances of ∼1012 Ω/□ (n type) and ∼1010 Ω/□ (p type) were obtained after implantation and annealing in the range of 300–600 °C. At higher annealing temperatures, the sheet resistance decreased to near the unimplanted values (3×104 Ω/□ in p type, 7×102 Ω/□ in n type). The evolution of the sheet resistance with annealing temperature is consistent with damage-related trap sites removing carriers from the conduction or valence bands." @default.
- W2093622862 created "2016-06-24" @default.
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- W2093622862 date "2000-02-01" @default.
- W2093622862 modified "2023-09-26" @default.
- W2093622862 title "Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr" @default.
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- W2093622862 doi "https://doi.org/10.1063/1.371984" @default.
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