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• W2093628251 abstract "We have investigated the effect of a thin interfacial silicon oxide on the atomic-layer-deposited Al2O3 film passivating the silicon surface based on rapid thermal process (RTP). It is found that the effective carrier lifetime of samples strongly depends on the RTP temperature and reaches the maximum value at 550 °C. Both capacitance-voltage measurements and theoretical simulation have revealed that the RTP treatment cannot only modulate the charges in the Al2O3 film but also reduce the density of interface states responsible for the surface recombination. These results are interesting for the fabrication of high efficiency silicon solar cells in photovoltaics." @default.
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• W2093628251 date "2011-08-01" @default.
• W2093628251 modified "2023-10-06" @default.
• W2093628251 title "Modulation of atomic-layer-deposited Al2O3 film passivation of silicon surface by rapid thermal processing" @default.
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• W2093628251 doi "https://doi.org/10.1063/1.3616145" @default.
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