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• W2093670025 abstract "We propose a method of controlling the growth mode in an epitaxial system. It takes advantage of differences in the vibrational frequencies of adatom–substrate bonds at terraces and steps. With a properly tuned infrared laser, one can selectively excite only the adatom–substrate bonds at steps and enhance the mobility of these adatoms, consequently promoting step-flow growth and reducing film roughness. The feasibility of this method is shown theoretically with respect to the prototype system of chemical vapor deposition growth of silicon." @default.
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• W2093670025 date "2004-03-22" @default.
• W2093670025 modified "2023-09-25" @default.
• W2093670025 title "Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon" @default.
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• W2093670025 doi "https://doi.org/10.1063/1.1687452" @default.
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