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- W2093763669 abstract "Backscattering spectroscopy has become established as a characterization tool for semiconductor materials because it offers insight into crystalline order, the masses of impurities, the depth distribution of impurities and disorder, the stoichiometry of compound layers, and the lattice position of impurities. Quantitative results are derived from fundamental physical principals and well known parameters such that 5% accuracy is attainable without standards. In the silicon matrix, metal suicides, complex metallization schemes, implanted layers, and processed surfaces are ideal subjects for characterization by backscattering. Measurement time is consistent with process development if data reduction and presentation can keep pace. This backscattering system has been designed to achieve high throughput using computerized methods for both data acquisition and reduction. The success with the silicon matrix arises from favorable kinematics of backscattering from heavy elements in a light matrix. Application to III–V or II–VI semiconductors requires novel methods in order to overcome the less favorable kinematics." @default.
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- W2093763669 date "1985-05-01" @default.
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- W2093763669 title "The characterization of semiconductor materials by backscattering spectroscopy" @default.
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- W2093763669 doi "https://doi.org/10.1016/0168-583x(85)90313-1" @default.
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