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• W2093914556 abstract "Tungsten-carbon thin films have been deposited by reactive (Ar + C6H6) DC magnetron sputtering onto various substrates. Deposition onto glass, monocrystalline silicon, tantalum and stainless steel at room temperature yielded W–C films, having XRD patterns corresponding to the structure of heavily disordered W2C or WC1–x carbides. The samples deposited upon the Au or Cu foils were nanocrystalline cubic WC1–x with the grain size of 2.9 nm. Disordered tungsten-carbon films were stable up to 1200°C. Microhardness of the films with disordered W2C phase was about 5–6 GPa while that of the films with disordered WC1–x phase was about 17 GPa. The characteristics of films can be understood considering the effects of the incorporation of free carbon and/or carbon-hydrogen fragments into the tungsten carbide layer." @default.
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• W2093914556 date "1998-05-01" @default.
• W2093914556 modified "2023-09-29" @default.
• W2093914556 title "Tungsten–carbon films prepared by reactive sputtering from argon–benzene discharges" @default.
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• W2093914556 doi "https://doi.org/10.1016/s0040-6090(97)00758-x" @default.
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