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- W2093923644 abstract "physica status solidi (a)Volume 30, Issue 2 p. K109-K113 Short Note Solubility and origin of thermally induced recombination centres in n-type and p-type silicon K. D. Glinchuk, K. D. Glinchuk Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, KievSearch for more papers by this authorN. M. Litovchenko, N. M. Litovchenko Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, KievSearch for more papers by this authorR. Merker, R. Merker Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, KievSearch for more papers by this author K. D. Glinchuk, K. D. Glinchuk Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, KievSearch for more papers by this authorN. M. Litovchenko, N. M. Litovchenko Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, KievSearch for more papers by this authorR. Merker, R. Merker Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, KievSearch for more papers by this author First published: 16 August 1975 https://doi.org/10.1002/pssa.2210300245Citations: 6AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume30, Issue216 August 1975Pages K109-K113 RelatedInformation" @default.
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- W2093923644 title "Solubility and origin of thermally induced recombination centres in n-type and p-type silicon" @default.
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