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• W2093963069 abstract "Y1Ba2Cu3Ox films, ranging in thickness from 0.9 to 10 μm, were grown on MgO(100) substrates by liquid phase epitaxy. These films were characterized structurally and electrically. From θ−2σ and ƒ scan X-ray diffraction, and Rutherford backscattering spectrometry measurements, it was found that the films were c-axis oriented and had good in-plane alignment, showing that good epitaxial growth was achieved. The Tc,end values in a 20 mm long and 15 mm wide Y1Ba2Cu3Ox film exceeded 90 K. The Tc and resistivity values did not become degraded after patterning into a strip. Although Jc values decreased with increasing film thickness, even a 7 μm-thick film showed a Jc value of 9.3 × 105 A/cm2 at 77 K. These data are comparable to those reported for Y1Ba2Cu3Ox films prepared on CeO2/YSZ(100) by pulse laser deposition, and thought to be due to the c-axis orientation and good in-plane alignment of the liquid phase epitaxially grown thick films." @default.
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• W2093963069 date "1997-05-01" @default.
• W2093963069 modified "2023-09-27" @default.
• W2093963069 title "Structural and electrical properties of liquid phase epitaxially grown Y1Ba2Cu3Ox films" @default.
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• W2093963069 doi "https://doi.org/10.1016/s0921-4534(97)00127-5" @default.
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