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• W2094145655 startingPage "215402" @default.
• W2094145655 abstract "The influence of Sn doping on the crystallization and thermal stability of Ge2Sb2Te5 phase change material was studied. Thermal analysis shows that the phase change of Sn7.0Ge20.6Sb20.7Te51.7 occurs slightly higher than that of Ge2Sb2Te5 at 154 °C and has a lower melting point at 536 °C. The activation energy for crystallization for this material is also higher. It has a face-centred-cubic crystal structure. A fast crystallization speed of 60 ns is realized upon irradiation by a blue laser beam of 405 nm. The use of the Sn7.0Ge20.6Sb20.7Te51.7 phase change material as a mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability." @default.
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• W2094145655 date "2008-10-06" @default.
• W2094145655 modified "2023-10-08" @default.
• W2094145655 title "Crystallization and thermal stability of Sn-doped Ge₂Sb₂Te₅phase change material" @default.
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• W2094145655 doi "https://doi.org/10.1088/0022-3727/41/21/215402" @default.
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