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- W2094173668 abstract "We report the Schottky limit and a charge neutrality level (CNL) experimentally demonstrated at metal/6H-SiC(0 0 0 1) interfaces. An interface with the Schottky limit was formed by dipping SiC surfaces in boiling pure water before metallization. The total density of interface states, Dit, was a drastically small value of 4.6×1010 states cm−2/eV, indicating the density of the metal induced gap states was less than this value. In contrast, at incompletely passivated interfaces without the boiling water dipping process, a broad continuum of interface states with Dit of 2.8×1013 states cm−2/eV was observed with the CNL located at 0.797 eV from the conduction band minimum. The origin of these interface states was found to be in the disordered interface layers." @default.
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- W2094173668 date "2001-12-01" @default.
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- W2094173668 title "The Schottky limit and a charge neutrality level found on metal/6H-SiC interfaces" @default.
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- W2094173668 doi "https://doi.org/10.1016/s0039-6028(01)01596-5" @default.
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