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- W2094231498 abstract "Nanocrystalline silicon layers have been deposited by electron cyclotron resonance chemical vapor deposition from silane as precursor. Although hydrogen was not deliberately introduced in the plasma it was incorporated in the grown layers as evidenced by the presence of a main infrared absorption band around with a shoulder at . This suggests that most of the hydrogen is bonded to internal surfaces of microcavities instead of isolated Si‐H bonds. In the first few hundreds, ∼500 Å, of deposited layers, the estimated hydrogen concentration is rather low, below 5 atom %, and increases strongly for larger thicknesses. Solid phase crystallization at ∼1100°C occurs in thin layers close to the substrates in which the hydrogen concentration is below a certain critical value of ∼5 atom %. © 1999 The Electrochemical Society. All rights reserved." @default.
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- W2094231498 date "1999-05-01" @default.
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- W2094231498 title "Hydrogen Incorporation and Crystallization of Nanocrystalline Silicon Deposited by Electron Cyclotron Resonance Plasmas" @default.
- W2094231498 doi "https://doi.org/10.1149/1.1391874" @default.
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