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- W2094233791 abstract "Contrast enhanced lithography has been been applied to mid-uv projection lithography with a new class of CEL materials, polysilanes. The nonlinear bleaching photochemistry of polysilanes provides a unique "bleaching latency" for contrast enhanced lithography. SAMPLE resist exposure and development simulation is compared with experimental CEL resist images using AZ2400® photoresist. The contrast enhancement gained with the use of polysilanes is examined as a function of exposure dose, image size, and contrast enhancement film thickness." @default.
- W2094233791 created "2016-06-24" @default.
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- W2094233791 date "1984-05-21" @default.
- W2094233791 modified "2023-10-15" @default.
- W2094233791 title "Contrast Enhanced UV Lithography With Polysilanes" @default.
- W2094233791 doi "https://doi.org/10.1117/12.941784" @default.
- W2094233791 hasPublicationYear "1984" @default.
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