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- W2094262085 abstract "Abstract This article investigates the physics underlying field effect passivation of p-type Si surfaces coated with SiN x (:H) of various Si contents. We find a correlation between the effective lifetime of minority carriers in p-type Si passivated with SiN x , on the one hand, and the dark dc-conductivity data of corresponding a-SiN x -films with different composition, on the other hand. By increasing the amount of Si in a-SiN x (:H) structures the bandgap decreases from about 5 to 2 eV. As a result, the dark dc-conductivity rises by several orders of magnitude. The conductivity prefactors and the activation energies as calculated from the conductivity versus temperature data obey the Meyer–Neldel relation with an axio-intercept of about 10 −7 (Ωcm) −1 and a slope of about 35 meV. Thus, Si-rich a-SiN x (:H) films behave like a defect doped n-type semiconductor. The activation energy of the conductance in films with the same composition changes with the hydrogen content. A minimum in the activation energy correlates with a minimum of the surface recombination velocity at the a-SiN x /p-Si interface. We ascribe both effects to a variation of the Fermi level in the films." @default.
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- W2094262085 date "2000-02-01" @default.
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- W2094262085 title "Properties of amorphous Si-rich silicon nitride prepared by rf-magnetron sputtering" @default.
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- W2094262085 doi "https://doi.org/10.1016/s0921-5107(99)00399-2" @default.
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