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- W2094276412 abstract "High-current driving capability is realized in submicron-gate lattice-strained In0.59Ga0.41As/In0.52Al0.48As (Δa/a=4×10−3) modulation-doped field-effect transistors. Full-channel drain current in excess of 1.10 and 1.90 A/mm are obtained at 80 K for the singly doped and doubly doped structure, respectively. By using the double modulation technique and a buried p-buffer layer, excellent high-frequency performance and flat transconductance characteristics were realized over a very broad range of gate and drain bias voltages. These devices are very suitable for large-signal or power device operations. The high quality In0.52Al0.48As buffer layer eliminates the hysteresis and current instability (or the kink effect) in submicron-gate devices at both 300 and 80 K." @default.
- W2094276412 created "2016-06-24" @default.
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- W2094276412 date "1990-10-22" @default.
- W2094276412 modified "2023-10-14" @default.
- W2094276412 title "High-current lattice-strained In0.59Ga0.41As/In0.52Al0.48As modulation-doped field-effect transistors grown by molecular beam epitaxy" @default.
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- W2094276412 doi "https://doi.org/10.1063/1.104041" @default.
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