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• W2094377265 abstract "This paper discusses the physical mechanisms governing the nucleation and growth of Si nanocrystals embedded in an amorphous $mathrm{Si}{mathrm{O}}_{2}$ matrix. Reactive pulsed laser deposition combined with a postannealing treatment is shown to be a flexible approach to synthesize Si nanocrystals. This technique ensures an excellent control of Si nanocrystal size by varying the oxygen pressure. By correlating nanocrystal size (measured by x-ray diffraction and transmission electron microscopy) with the nonoxidized Si volume fraction (determined by x-ray photoemission spectroscopy), it is found that the formation of nanocrystals follows classical nucleation theory, whereby the average distance between nuclei centers remains constant." @default.
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• W2094377265 date "2006-08-30" @default.
• W2094377265 modified "2023-10-16" @default.
• W2094377265 title "Nucleation and growth of Si nanocrystals in an amorphous<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi mathvariant=normal>Si</mml:mi><mml:msub><mml:mi mathvariant=normal>O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>matrix" @default.
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• W2094377265 doi "https://doi.org/10.1103/physrevb.74.075334" @default.
• W2094377265 hasPublicationYear "2006" @default.
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