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- W2094398003 abstract "We report on the fabrication and characterization of an edge-emitting semiconductor laser with a gain medium consisting of two layers of patterned, self-aligned, vertically coupled quantum dots (QDs) using a wet-etching and regrowth technique. A threshold current density of 300 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> is demonstrated at 77 K. The presence of emission from QD excited states in both the spontaneous emission and laser spectra indicates 3-D quantum confinement in QDs fabricated using this technique." @default.
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- W2094398003 date "2010-12-01" @default.
- W2094398003 modified "2023-09-24" @default.
- W2094398003 title "Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching" @default.
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- W2094398003 doi "https://doi.org/10.1109/jqe.2010.2047246" @default.
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