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- W2094487913 abstract "We have investigated the effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on a GaAs substrate by metal organic chemical vapor deposition (MOCVD). The AlInAs layers grown at 700 °C show a much better crystalline quality than the ones grown at 675 °C, because a high temperature can suppress phase separation and enhance the glide velocity of dislocations during the strain relaxation process. Compared with the miscuts of 2° and 7°, the 15° miscut is more effective in suppressing phase separation during the growth of the AlInAs buffers. Theoretical calculations show that the miscut will facilitate the strain relaxation by dislocation gliding. These results indicate that a high growth temperature and a large miscut will improve the quality of the metamorphic AlInAs layers grown on the GaAs substrate by MOCVD. • Five compositionally step-graded AlInAs layers with a total lattice mismatch of 2.1% to GaAs substrate were grown by MOCVD. • High crystalline quality of the AlInAs layers were obtained at a temperature of 700 °C with a substrate miscut of 15°. • Both a high temperature and a big substrate miscut help to suppress phase separation in AlInAs layers. • Strain relaxation in the mismatched AlInAs layers tends to be more effective at increasing the substrate miscut." @default.
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- W2094487913 date "2013-10-01" @default.
- W2094487913 modified "2023-10-18" @default.
- W2094487913 title "Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate" @default.
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- W2094487913 doi "https://doi.org/10.1016/j.jcrysgro.2013.07.014" @default.
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