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- W2094508726 abstract "A method for calculating the electronic density of states of a semiconductor in the presence of impurity scattering is given. The approach is based on a low density multiple scattering expansion. The calculation treats the density of states of the conduction band, shifts of the band edge, and the profiles of the impurity bands. It is performed for a simple model, using a spherical well potential for the individual impurity centers, but could be extended to any scattering potential. The first impurity band forms when the potential is sufficiently strong that one center can bind an electron. The impurity bands are of finite width, have a flat upper edge, and an asymmetrically broadened tail on the low energy side." @default.
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- W2094508726 date "1983-04-01" @default.
- W2094508726 modified "2023-09-25" @default.
- W2094508726 title "Multiple scattering theory of the density of states in semiconductors" @default.
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- W2094508726 doi "https://doi.org/10.1016/0038-1098(83)90257-0" @default.
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