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• W2094611390 abstract "The authors have studied AlGaAs grown by molecular beam epitaxy (MBE) before and after post-growth hydrogen plasma treatment by means of temperature-dependent photoluminescence (PL), capacitance-voltage (C/V), and electron-beam-induced current (EBIC) analysis. The excitonic and extrinsic luminescence features of n-type AlGaAs samples subjected to a hydrogen plasma reveal the neutralization effect of vacancies and shallow acceptors. The hydrogen incorporation provides an increase of the non-radiative lifetime of the minority carriers. This behavior was checked by investigations of the minority carrier diffusion and of the quantum yield, which increase due to the hydrogen incorporation. The increase of the non-radiative lifetime is probably caused by the passivation of non-radiative recombination channels involving vacancies." @default.
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• W2094611390 date "1993-02-01" @default.
• W2094611390 modified "2023-09-23" @default.
• W2094611390 title "Minority carrier recombination in post-growth hydrogenated AlGaAs" @default.
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• W2094611390 doi "https://doi.org/10.1088/0268-1242/8/2/013" @default.
• W2094611390 hasPublicationYear "1993" @default.
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