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- W2094760336 abstract "Modeling of p<sup>+</sup>np<sup>+</sup> CMOS Si LED structures show that by utilizing a short linear increasing E-field in the p<sup>+</sup>n reverse biased junction with a gradient of approximately 5 × 10<sup>5</sup> V.cm<sup>-1</sup>. μm<sup>-1</sup>, and facing an injecting p<sup>+</sup>n junction, has the potential to enhance photonic emissions in the 2.2 and 2.8 eV (450-750nm ) regime. Latest new designs utilize reach-through techniques in p<sup>+</sup>np<sup>+</sup> avalanche-injection control structures and p<sup>+</sup>np<sup>+</sup> poly-Si gated structures and show positive realizations of this model. Areas in the devices show marked increases in emission efficiency of factors of up to 50 - 100 as compared to previous realizations utilizing no reach-through and injection techniques. The current devices operated in the 6-8V, 1uA - 2mA regime and emit at levels of up to ~10nW /μm<sup>2</sup>. The developed devices have been realized using standard 0.35 μm CMOS design rules and fabrication technology, and have particular technological significance for future all-silicon CMOS opto-elctronic circuits and systems. The current emission levels are about three orders higher than the low frequency detectability limit of CMOS p-i-n detectors of corresponding area." @default.
- W2094760336 created "2016-06-24" @default.
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- W2094760336 date "2008-02-07" @default.
- W2094760336 modified "2023-09-23" @default.
- W2094760336 title "Increasing the efficiency of p+np+injection-avalanche Si CMOS LEDs (450nm - 750nm) by means of depletion layer profiling and reach-through techniques" @default.
- W2094760336 doi "https://doi.org/10.1117/12.760038" @default.
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