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• W2094859645 abstract "In2Se3 thin films were grown by alternate electrodeposition of selenium and indium from separate baths onto titanium substrates with subsequent thermal annealing. The influence of annealing temperature on the properties of the obtained films was examined. The results of X-ray diffraction patterns led to the conclusion that films were β-phase when the temperature ranged between 300 and 500°C. At 600°C the thin film loses Se and the ratio Se/In decreases. Only photoanodic response, n-type thin films, was observed when the samples were tested in a photoelectrochemical cell with a sulfite/sulfate redox couple. Values of the photocurrent on the spectra response were increased when the annealing temperature was also increased, showing the best photocurrent values at 500°C, and the films that were annealed at 600°C showed no photoactivity. Spectral responses after chemical etching of the samples showed a significant increase of the photocurrent. Application of Gärtner-Butler's model to the interface semiconductor-eletrolyte makes it possible to obtain the semiconductor energy gap, on samples heated at 500°C, corresponding to a direct allowed band transition." @default.
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• W2094859645 date "1987-12-01" @default.
• W2094859645 modified "2023-10-12" @default.
• W2094859645 title "Electrochemical synthesis of photoactive In2Se3 thin films" @default.
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• W2094859645 doi "https://doi.org/10.1016/0165-1633(87)90049-9" @default.
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