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- W2094961504 abstract "With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state characteristics, switching behavior, and safe operating area for symmetric (nonpunchthrough) and asymmetric (punchthrough) devices." @default.
- W2094961504 created "2016-06-24" @default.
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- W2094961504 date "2013-02-01" @default.
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- W2094961504 title "Analytical Modeling of IGBTs: Challenges and Solutions" @default.
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- W2094961504 doi "https://doi.org/10.1109/ted.2012.2222415" @default.
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