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- W2095121837 abstract "Several GaSbBi(As)/GaSb films were grown to investigate the effects of Bi on GaSb surface morphology and bulk composition as a function of growth conditions. Scanning electron microscopy of the surface shows several biphasic droplets consisting of Ga- and Bi-rich phases ≈1μm in diameter form on the surface. Some of these droplets exhibit more unusual features such as facets, sub-droplets, and droplet etching into the underlying film. Bi droplet coverage shows a direct increase with increasing Bi:Ga and Bi:Sb BEP ratios. Rutherford backscatter and X-ray diffraction analyses of these films show Bi concentration of up to 12% and a concurrently increasing unintentional As concentration of up to 9.3%, suggesting the presence of a strain auto-compensation mechanism during film growth. Once Bi concentration reaches 10–12%, Bi incorporation saturates, with excess Bi atoms instead accumulating in the droplets." @default.
- W2095121837 created "2016-06-24" @default.
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- W2095121837 date "2014-03-01" @default.
- W2095121837 modified "2023-09-25" @default.
- W2095121837 title "Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films" @default.
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- W2095121837 doi "https://doi.org/10.1016/j.jcrysgro.2013.12.001" @default.
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