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- W2095122707 abstract "The microstructure was investigated for D.C.-plated copper electrodeposits, prepared from two types of electrolyte with an applied voltage of 5 V and current densities ranging from 0.01 to 0.06 A cm−2, onto Si substrate containing a thin stacked layer of ionized metal plasma (IMP) copper seed and a TiN diffusion barrier. Reduced grain size of copper electrodeposits was found with increasing deposition current density. Electroplated copper film with an average grain size of 100 nm could be produced with current densities of 0.05–0.06 A cm−2. The surface morphology of the copper electrodeposits was very rough at low current densities and its roughness correlated well with the observed microstructures. The resistivity of the copper film was high (∼2.5 μΩ cm) at low current densities, due to the presence of a high defect density, but it decreased to a value of 2.0 μΩ cm with increasing current densities, which resulted in a decrease in the defect density within the films. Both electrolytes produced similar results." @default.
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- W2095122707 date "1999-05-01" @default.
- W2095122707 modified "2023-10-16" @default.
- W2095122707 title "Fabrication of D.C.-plated nanocrystalline copper electrodeposits" @default.
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- W2095122707 doi "https://doi.org/10.1016/s0924-0136(99)00009-6" @default.
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