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- W2095338410 abstract "In less than two years immersion lithography has been developed from curiosity to viable technology for IC manufacturing. With water as immersion fluid ArF immersion offers the potential to extend conventional optical lithography to at least the 45-nm node. By slightly modifying “dry lenses” it is possible to use the immersion option as enhancement for the focus window. With immersion the DOF can be increased with 50% and more. ASML has developed and shipped ArF immersion TWINSCAN systems with lens NA’s of 0.75 and of 0.85. In the near future immersion systems with 0.93 NA and >1.1NA will become available. In this paper we discuss the experimental results obtained on the TWINSCAN immersion systems. In the first part we discuss the experimental results obtained with the 0.75 NA and 0.85 NA immersion systems. It is demonstrated that basic system performance is maintained in case of immersion, while the imaging performance is improved significantly. We present data on resolution capability, full wafer CD uniformity, lens aberrations and single machine overlay. In the last part of the paper we will give an outlook to the next generations of immersion systems. This will include a discussion on the possible use of high index fluids and what resolution can be reached ultimately." @default.
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- W2095338410 date "2005-05-12" @default.
- W2095338410 modified "2023-09-30" @default.
- W2095338410 title "Immersion lithography exposure systems: today's capabilities and tomorrow’s expectations" @default.
- W2095338410 doi "https://doi.org/10.1117/12.606799" @default.
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