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• W2095366247 abstract "Low-energy DC-plasma-enhanced chemical vapor deposition (LEPECVD) is a novel technique for low-temperature epitaxial growth. A DC voltage arc discharge operated at a current Iarc=20–70 A is responsible for the dissociation of the reactive gases SiH4 and GeH4, and a very efficient hydrogen removal from the surface. The resulting growth rates at which epitaxial growth can be achieved are in the nm/s range for substrate temperatures substantially below 600°C. SiGe superlattices and step-graded buffers are examples of structures we have realized by LEPECVD." @default.
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• W2095366247 date "1998-06-01" @default.
• W2095366247 modified "2023-09-27" @default.
• W2095366247 title "Low temperature epitaxial growth by LEPECVD" @default.
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• W2095366247 doi "https://doi.org/10.1016/s0022-0248(98)00061-x" @default.
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